Product Datasheet Search Results:
9 Pages, 518 KB, Original- FS150R07N3E4
- Infineon Technologies
- FS150R07N3E4
9 Pages, 529 KB, Original- FS150R07N3E4_B11
- Infineon Technologies
- FS150R07N3E4_B11
9 Pages, 669 KB, Original- FS150R07N3E4BOSA1
- Infineon Technologies Ag
- Trench and Field Stop IGBT Module
Product Details Search Results:
Infineon.com/FS150R07N3E4
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"150 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Pd - Power Dissipation":"430 W","Collector-Emitter Saturation Voltage":"1.95 V","Maximum Operating Temperature":"+ 150 C",...
1571 Bytes - 23:23:14, 31 March 2025
Infineon.com/FS150R07N3E4_B11
{"Factory Pack Quantity":"10","Brand":"Infineon Technologies","Product Category":"IGBT Modules","RoHS":"Details","Manufacturer":"Infineon"}...
1085 Bytes - 23:23:14, 31 March 2025
Infineon.com/FS150R07N3E4BOSA1
1188 Bytes - 23:23:14, 31 March 2025
