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FP35R12W2T4_B11.pdf11 Pages, 438 KB, Original

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Infineon.com/FP35R12W2T4_B11
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"510 ns","Collector Current-Max (IC)":"54 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"43 ns","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Case ...
1403 Bytes - 00:50:08, 23 January 2025

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