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FP35R12KT4_B15.pdf12 Pages, 560 KB, Original

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Infineon.com/FP35R12KT4_B15
{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Pd - Power Dissipation":"210 W","Collector-Emitter Saturation Voltage":"2.15 V","Maximum Operating Temperature":"+ 150 C",...
1585 Bytes - 13:06:59, 11 March 2025

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