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FMR11N90E.pdf5 Pages, 523 KB, Original

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Fujielectric.co.jp/FMR11N90E
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.13 W","Avalanche Energy Rating (Eas)":"812 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1491 Bytes - 11:32:26, 02 December 2024

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