Product Datasheet Search Results:

FK10VS-9-T1.pdf5 Pages, 202 KB, Scan
FK10VS-9-T1
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FK10VS-9-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","Transistor Application":"SWITCHING","Surfa...
1501 Bytes - 03:37:56, 23 November 2024

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