Product Datasheet Search Results:
- FF200R12KT3EHOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin 62MM-1 Tray
Product Details Search Results:
Infineon.com/FF200R12KT3EHOSA1
{"Collector Current (DC) ":"295(A)","Operating Temperature (Min)":"-40C","Collector-Emitter Voltage":"1200(V)","Mounting":"Screw","Operating Temperature (Max)":"125C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Tray","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"62MM-1","Configuration":"Dual","Pin Count":"7"}...
1579 Bytes - 05:32:18, 25 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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FF200R12KT3.pdf | 0.24 | 1 | Request | |
FF200R12KT3_E.pdf | 0.24 | 1 | Request | |
FF200R12KT3.pdf | 0.39 | 1 | Request | |
FF200R12KT3_E.pdf | 0.39 | 1 | Request |