Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"62nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Wafer 6/8 Inch Addition 16/Jun/2014","PCN Design/Specification":"Mold Compound 12/Dec/2007","Rds On (Max) @ Id, Vgs":"13 mOhm @ 11A, 10V","Datasheets":"FDS6675BZ","FET Type":"MOSFET P-Channel, Metal O...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"120 ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"8SOIC N","Typical Turn-On Delay Time":"3 ns","Mounting":"Surface Mount","Typical Rise Time":"7.8 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"13@10V mOhm","Maximum Gate Source Voltage":"\u00b125 V","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"60 ns"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b125(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...