Product Datasheet Search Results:
9 Pages, 125 KB, Original- FD401R17KF6C_B2
- Infineon Technologies
- FD401R17KF6C_B2
Product Details Search Results:
Infineon.com/FD401R17KF6C_B2
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"650 A","Product Category":"IGBT Modules","Factory Pack Quantity":"4","Brand":"Infineon Technologies","Pd - Power Dissipation":"3.1 kW","Collector-Emitter Saturation Voltage":"2.6 V","Collector- Emitter Voltage VCEO Max":"1700 V","Product":"IGBT Silicon Modules","Mounting Style":"SMD/SMT","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"IHM73","Configuration":"Single","Maximum ...
1485 Bytes - 20:27:13, 05 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FD401R17KF6C_B2.pdf | 0.12 | 1 | Request |
