Product Datasheet Search Results:
- FB10R06W1E3
- Infineon Technologies
- FB10R06W1E3
Product Details Search Results:
Infineon.com/FB10R06W1E3
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"260 ns","Collector Current-Max (IC)":"18 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"26 ns","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Case C...
1375 Bytes - 13:11:43, 04 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FB10R06W1E3.pdf | 0.53 | 1 | Request |