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FB10R06W1E3.pdf10 Pages, 549 KB, Original

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Infineon.com/FB10R06W1E3
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"260 ns","Collector Current-Max (IC)":"18 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"26 ns","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Case C...
1375 Bytes - 13:11:43, 04 January 2025

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