Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Online Catalog":"N-Channel Depletion Mode FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92 (TO-226)","Datasheets":"DN3545","Rds On (Max) @ Id, Vgs":"20 Ohm @ 150mA, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"740mW","Standard Package":...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"450 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Depletion","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"136 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"30 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"450 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Depletion","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"136 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"30 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"450 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"136 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"450 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Depletion","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"136 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"30 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"450 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Depletion","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"136 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"30 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical ...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7400 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1360 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...