Datasheet.Directory

{"Status":"Discontinued","V(FM) Max.(V) Forward Voltage":"7.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"20","Package":"BR-6t","@Temp (°C) (Test Condition)":"25","@Temp. (°C) (Test Condition)":"25","@t(w) (s) (Test Condition)":"8.3m","@V(R) (V)(Test Condition)":"6.5k","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.5k","Military":"N","I(RM) Max.(A) Reverse Current":"5.0u","@I(FM) (A) (Test Condition)":".20","I(O) Max.(A) Output Current":".20","I(RM) Max.(A) Pk. Rev. Current":".20m"}...

{"Status":"Discontinued","V(FM) Max.(V) Forward Voltage":"7.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"20","Package":"BR-6t","@Temp (°C) (Test Condition)":"25","@Temp. (°C) (Test Condition)":"25","@t(w) (s) (Test Condition)":"8.3m","@V(R) (V)(Test Condition)":"6.5k","V(RRM)(V) Rep.Pk.Rev. Voltage":"6.5k","Military":"N","I(RM) Max.(A) Reverse Current":"5.0u","@I(FM) (A) (Test Condition)":"200m","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Pk. Rev. Current":"200u"}...

{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"42 A","Product Category":"IGBT Transistors","Brand":"Infineon Technologies","Pd - Power Dissipation":"125 W","Mounting Style":"Through Hole","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tube","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"TO-220-3","Collector-Emitter Saturation Voltage":"1.6 V","Part # Aliases":"IGP20N65F5XKSA1","Configuration":"Single","Maximum Op...

{"Collector Current (DC) ":"42(A)","Operating Temperature (Min)":"-40C","Mounting":"Through Hole","Operating Temperature (Max)":"175C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"TO-220","Configuration":"Single","Pin Count":"3 +Tab"}...

{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"42 A","Product Category":"IGBT Transistors","Brand":"Infineon Technologies","Pd - Power Dissipation":"125 W","Mounting Style":"Through Hole","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tube","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"TO-220-3","Collector-Emitter Saturation Voltage":"1.65 V","Part # Aliases":"IGP20N65H5XKSA1","Configuration":"Single","Maximum O...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"42A","Switching Energy":"170\u00b5J (on), 60\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 20A","Td (on/off) @ 25\u00b0C":"18ns/156ns","Input Type":"Standard","Package / Case":"TO-220-3","Gate Charge":"48nC","Product Photos":"TO-220-3","Voltage - Collector Emitter Breakdown (Max)":"650V","Reverse Recovery Time (trr)":"-","Datasheets":"IGP20N65H5","Standard Package":"500","Test Condition":"400V, 10A, 32 Ohm, 15V","IGBT Typ...

{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"40 A","Product Category":"IGBT Transistors","Brand":"Infineon Technologies","Pd - Power Dissipation":"150 W","Mounting Style":"Through Hole","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tube","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"TO-220-3","Collector-Emitter Saturation Voltage":"1.35 V","Part # Aliases":"IHW20N65R5XKSA1","Configuration":"Single","Maximum O...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40A","Switching Energy":"300\u00b5J (on), 70\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"1.7V @ 15V, 20A","Td (on/off) @ 25\u00b0C":"24ns/250ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"97nC","Product Photos":"IPW65R095C7XKSA1","Voltage - Collector Emitter Breakdown (Max)":"650V","Reverse Recovery Time (trr)":"68ns","Datasheets":"IHW20N65R5","Standard Package":"240","Test Condition":"400V, 10A, 20 Ohm, 15V...

{"Packaging":"Tape and Reel","Rad Hardened":"No"}...

{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"42 A","Product Category":"IGBT Transistors","Brand":"Infineon Technologies","Pd - Power Dissipation":"125 W","Mounting Style":"Through Hole","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tube","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"TO-220-3","Collector-Emitter Saturation Voltage":"1.6 V","Part # Aliases":"IKP20N65F5XKSA1","Configuration":"Single","Maximum Op...

{"Collector Current (DC) ":"42(A)","Operating Temperature (Min)":"-40C","Mounting":"Through Hole","Operating Temperature (Max)":"175C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"TO-220","Configuration":"Single","Pin Count":"3 +Tab"}...