Did you mean: 1N1730
Product Datasheet Search Results:
6 Pages, 633 KB, Scan- 1N1730
- Conditioning Semiconductor Devices Corporation
- 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
6 Pages, 633 KB, Scan- 1N1731
- Conditioning Semiconductor Devices Corporation
- 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
6 Pages, 633 KB, Scan- 1N1732
- Conditioning Semiconductor Devices Corporation
- 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N1733
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N1734
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N2382
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N2383
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N2384
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N2385
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N5477
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N5478
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
4 Pages, 547 KB, Scan- 1N5479
- Conditioning Semiconductor Devices Corporation
- 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
Product Details Search Results:
Conditioning_semiconductor_devices_corporation/423DB1AB1
{"V(FM) Max.(V) Forward Voltage":"1.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"SIP","I(O) Max.(A) Output Current":"1.5","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
968 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/423MB2AI1
{"V(FM) Max.(V) Forward Voltage":"2.1","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"BR-3q","I(O) Max.(A) Output Current":"1.0","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"40","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
972 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/423NF1AH1
{"V(FM) Max.(V) Forward Voltage":"1.05","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"BR-6t","I(O) Max.(A) Output Current":"3.6","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
949 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/423PC13AE1
{"V(FM) Max.(V) Forward Voltage":"16","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"500","Package":"BR-5q","I(O) Max.(A) Output Current":"1.2","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"55","@V(R) (V)(Test Condition)":"12k","V(RRM)(V) Rep.Pk.Rev. Voltage":"12k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"100u"}...
976 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/424AB1AB1
{"@Temp. (°C) (Test Condition)":"100","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SIP","I(O) Max.(A) Output Current":"1.0","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
965 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/426EH2AB1
{"@Temp. (°C) (Test Condition)":"100","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"2.4","Package":"Axial-13","I(O) Max.(A) Output Current":"500m","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
962 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/42A5175
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"175n","Technology":"TTL"}...
719 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/42A5200
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"20n","Technology":"TTL"}...
719 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/42A5300
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"30n","Technology":"TTL"}...
718 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/42A5400
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"40n","Technology":"TTL"}...
719 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/42A5600
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"60n","Technology":"TTL"}...
719 Bytes - 19:51:45, 04 May 2025
Conditioning_semiconductor_devices_corporation/523BB1AI1
{"V(FM) Max.(V) Forward Voltage":"930m","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","Package":"BR-3q","I(O) Max.(A) Output Current":"4.0","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"40","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"50u"}...
972 Bytes - 19:51:45, 04 May 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DATA_SHEET_SYSTEM_COMPONENTS_FOR_SAMPLE_GAS_CONDITIONING.pdf | 4.53 | 1 | Request |
