Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.115(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.36(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"7.5(ohm)","Number of Elements":"1"}...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCH...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCH...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCH...