Datasheet.Directory

{"V(FM) Max.(V) Forward Voltage":"1.5","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"70","Package":"DO-201AD","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"5.0u","@Temp (°C) (Test Condition)":"65","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","@I(F) (A) (Test Condition)":"500m","Military":"N","@I(FM) (A) (Test Condition)":"5.0","@I(R) (A) (Test Condition)":"250m"}...

{"Peak Rep Rev Volt":"600(V)","Peak Non-Repetitive Surge Current":"70(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"250(ns)","Mounting":"Through Hole","Forward Current":"3000(mA)","Rad Hardened":"No","Forward Voltage":"1.5(V)","Peak Reverse Current":"5(uA)","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"250(ns)","Package Type":"DO-201AD","Maximum Forward Current":"3000(mA)","Rev Curr":"5(uA)","Peak Forward Voltage":"1.5(V)","C...

{"@Temp. (°C) (Test Condition)":"165","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"70","Package":"SOD-64","@Temp (°C) (Test Condition)":"60","V(FM) Max.(V) Forward Voltage":"1.5","@t(w) (s) (Test Condition)":"10m","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"N","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"5.0","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...

{"@Temp. (°C) (Test Condition)":"165","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"70","Package":"SOD-64","@Temp (°C) (Test Condition)":"60","V(FM) Max.(V) Forward Voltage":"1.5","@t(w) (s) (Test Condition)":"10m","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"N","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"5.0","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...