Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"840pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO-220-3","Datasheets":"BUZ73AL","Rds On (Max) @ Id, Vgs":"600 mOhm @ 3.5A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"40W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole",...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"600 mOhm @ 3.5A, 5V","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO-220-3","Other Names":"BUZ73ALH BUZ73ALHXKSA1 SP000683012","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BUZ 73AL H","Power - Max":"40W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CH...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5.5 A","Mounting":"Through Hole","Drain-Source On-Volt":"200 V","Power Dissipation":"40 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...