Product Datasheet Search Results:

BUZ307.pdf9 Pages, 115 KB, Original
BUZ307
Infineon Technologies
N-Channel SIPMOS Power Transistor, 800V, TO-218, 3.00 ?, 3.0A
BUZ307.pdf1 Pages, 118 KB, Scan
BUZ307
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
BUZ307.pdf7 Pages, 219 KB, Original
BUZ307.pdf7 Pages, 1068 KB, Original
BUZ307.pdf67 Pages, 163 KB, Original
BUZ307
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Infineon.com/BUZ30A
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO220-3","Other Names":"BUZ30AIN BUZ30AX BUZ30AXK BUZ30AXTIN BUZ30AXTIN-ND SP000011336","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BUZ30A","Power - Max":"125W","Package / Case":"TO-220-3","Mounti...
1625 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A-E3044
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1515 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A-E3045
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1515 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A E3045A
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-TO263-3","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Power - Max":"125W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting ...
1618 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A-E3046
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1491 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A H
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO220-3","Datasheets":"BUZ 30A H","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package / Case":"TO...
1796 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30AH
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1474 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30A H3045A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-TO263-3","Datasheets":"BUZ30A H3045A","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"125W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Ta...
1752 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30AH3045A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-...
1550 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30AH3045AATMA1
{"Product Category":"MOSFET","Series":"BUZ30","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1129 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30AHXK
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21 A","Mounting":"Through Hole","Drain-Source On-Volt":"200 V","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1536 Bytes - 09:45:33, 17 December 2024
Infineon.com/BUZ30AHXKSA1
{"Product Category":"MOSFET","Series":"BUZ30","Brand":"Infineon Technologies","Packaging":"Tube","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1102 Bytes - 09:45:33, 17 December 2024

Documentation and Support

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