Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 1mA","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-220-3","Rds On (Max) @ Id, Vgs":"40 mOhm @ 15A, 10V","Datasheets":"BUZ11 TO220B03 Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Tape and Box/Reel Barcode Update 07/Aug/2014","Drain to Source Voltage (Vdss)":"50V","Standard Package":"50","Online Ca...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Standard Package":"400","Supplier Device Package":"TO-220AB","Datasheets":"BUZ11 TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"40 mOhm @ 15A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"75W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"50V","Current - Co...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Drain-Source On-Volt":"50(V)","Pin Count":"3 +Tab","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.04(ohm)","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Rail/Tube","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Package":"Chip","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"1.0m","V(BR)DSS (V)":"50","I(D) Abs. Drain Current (A)":"25","Military":"N","r(DS)on Max. (Ohms)":"60m"}...

{"Package":"Chip","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"1.0m","V(BR)DSS (V)":"50","I(D) Abs. Drain Current (A)":"30","Military":"N","r(DS)on Max. (Ohms)":".04"}...

{"C(iss) Max. (F)":"2000p","Absolute Max. Power Diss. (W)":"35","r(DS)on Max. (Ohms)":"40m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"15","@(VDS) (V) (Test Condition)":"20","Package":"TO-220","I(DSS) Min. (A)":"250u","Military":"N","t(r) Max. (s) Rise time":"110n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"170n","g(fs) Min. (S) Trans. conduct.":"4.0","I(D) Abs. Drain Current (A)":"30"}...

{"Military":"N","r(DS)on Max. (Ohms)":"40m","V(BR)DSS (V)":"50","Package":"Chip"}...