Product Datasheet Search Results:

BUK98180-100AT/R.pdf13 Pages, 288 KB, Original
BUK98180-100AT/R
Nxp Semiconductors / Philips Semiconductors
TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 4.6 A; Q<sub>gd</sub> (typ): 3.7 nC; R<sub>DS(on)</sub>: 173@10V180@5V201@4.5V mOhm; Thermal Resistance: 15 K/W; V<sub>DS</sub>max: 100 V

Product Details Search Results:

Nxp.com/BUK98180-100ATRL
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2010 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1490 Bytes - 17:34:49, 05 January 2025
Nxp.com/BUK98180-100ATRL13
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2010 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1502 Bytes - 17:34:49, 05 January 2025

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