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BUK9225-55A/T3.pdf13 Pages, 287 KB, Original
BUK9225-55A/T3
Nxp Semiconductors / Philips Semiconductors
TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 43 A; Q<sub>gd</sub> (typ): 14 nC; R<sub>DS(on)</sub>: 22@10V25@5V27@4.5V mOhm; Thermal Resistance: 1.6 K/W; V<sub>DS</sub>max: 55 V

Product Details Search Results:

Nxp.com/BUK9225-55A
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"123 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0270 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"173 A","Channel Type":"N-CHANNEL","FET Technolo...
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Nxp.com/BUK9225-55A,118
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"43A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"DPAK SOT428","Rds On (Max) @ Id, Vgs":"22 mOhm @ 25A, 10V","Datasheets":"BUK9225-55A","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"DPAK Reel Leader Pockets 27/Sep/2013 Increase of Empty Pockets on Leader 08/Nov/2013","Drain t...
1848 Bytes - 05:40:20, 18 October 2024
Nxp.com/BUK9225-55A /T3
{"Polarity":"N","Gate-Source Voltage (Max)":"15 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"43 A","Mounting":"Surface Mount","Drain-Source On-Volt":"55 V","Power Dissipation":"94 W","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1439 Bytes - 05:40:20, 18 October 2024

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