Product Datasheet Search Results:

BUK475-200A/B.pdf7 Pages, 56 KB, Original

Product Details Search Results:

Nxp.com/BUK475-200A127
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V...
1465 Bytes - 15:20:07, 20 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
ZPT25BUK10-06-A10.pdf5.681Request
ZPR08BUK6-06-A8.pdf6.621Request
ZPT06BUK6-06-A8.pdf5.681Request
ZPT06BUK6-04-A8.pdf5.681Request
ZP3-T16BUK10-06.pdf3.481Request
ZPT50BUK30-B5-A14.pdf5.681Request
ZPT50BUK50-08-A14.pdf5.681Request
ZP3-T13BUK6-06.pdf3.481Request
ZPT25BUK10-U6-A10.pdf5.681Request
ZPT06BUK6-B5-A8.pdf5.681Request
ZP3-T04BUK3-04.pdf3.481Request
ZPY50BUK10-U6-A14.pdf5.681Request