Datasheet.Directory

{"Status":"EOL/LIFEBUY","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"68 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"50","V(BR)DSS (V)":"50","g(fs) Max, (S) Trans. conduct,":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"70n","r(DS)on Max. (Ohms)":"100m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"68","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"3.5","Package":"TO-263AA",...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"50","V(BR)DSS (V)":"50","g(fs) Max, (S) Trans. conduct,":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"70n","r(DS)on Max. (Ohms)":"100m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"68","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"3.5","Package":"TO-263AB",...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"50(W)","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB SMD","Type":"Power MOSFET","Drain-Source On-Res":"0.1(ohm)","Number of Elements":"1","Drain-Source On-Volt":"50(V)"}...