Product Datasheet Search Results:

BTS112-A.pdf10 Pages, 475 KB, Original
BTS112-A SMD.pdf10 Pages, 576 KB, Original
BTS112-A SMD
Infineon Technologies
Temperature Protected Switch

Product Details Search Results:

Infineon.com/BTS112A
{"Status":"EOL/LIFEBUY","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"48 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration...
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Infineon.com/BTS112AE3045
{"C(iss) Max. (F)":"480p","Absolute Max. Power Diss. (W)":"40","V(BR)DSS (V)":"60","g(fs) Max, (S) Trans. conduct,":"5.7","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"150m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"12","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.5","V(GS)...
1294 Bytes - 18:57:20, 27 November 2024
Infineon.com/BTS112AE3045A
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1539 Bytes - 18:57:20, 27 November 2024
Infineon.com/BTS112ANK
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12 A","Mounting":"Through Hole","Drain-Source On-Volt":"60 V","Pin Count":"3 +Tab","Packaging":"Tube","Power Dissipation":"40 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.15 ohm","Number of Elements":"1"}...
1484 Bytes - 18:57:20, 27 November 2024
Infineon.com/BTS112ANKSA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"40(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.15(ohm)","Number of Elements":"1"}...
1508 Bytes - 18:57:20, 27 November 2024

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