Product Datasheet Search Results:
- BSZ120P03NS3G
- Infineon Technologies Ag
- 11 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
- BSZ120P03NS3GATMA1
- Infineon Technologies
- MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
Product Details Search Results:
Infineon.com/BSZ120P03NS3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"52 W","Avalanche Energy Rating (Eas)":"73 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","C...
1624 Bytes - 18:47:36, 03 January 2025
Infineon.com/BSZ120P03NS3GATMA1
{"Product Category":"MOSFET","Series":"BSZ120P03","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...
1173 Bytes - 18:47:36, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSZ120P03NS3G.pdf | 0.60 | 1 | Request |