Product Datasheet Search Results:
11 Pages, 1337 KB, Original- BSZ018NE2LS
- Infineon Technologies
- MOSFET N-CH 25V 23A TSDSON-8 - BSZ018NE2LS
9 Pages, 670 KB, Original- BSZ018NE2LSATMA1
- Infineon Technologies
- Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP
11 Pages, 1267 KB, Original- BSZ018NE2LSI
- Infineon Technologies
- MOSFET N-CH 25V 22A TSDSON-8 - BSZ018NE2LSI
9 Pages, 588 KB, Original- BSZ018NE2LSIATMA1
- Infineon Technologies
- Trans MOSFET N-CH 25V 22A 8-Pin TSDSON EP
10 Pages, 649 KB, Original- BSZ018NE2LSIXT
- Infineon Technologies
- MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
Product Details Search Results:
Infineon.com/BSZ018NE2LS
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"8-TSDSON","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2800pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TSDSON-8 (3.3x3.3)","Datasheets":"BSZ018NE2LS","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00a...
1858 Bytes - 14:45:05, 20 January 2025
Infineon.com/BSZ018NE2LSATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"23(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"2.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TSDSON EP","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1579 Bytes - 14:45:05, 20 January 2025
Infineon.com/BSZ018NE2LSI
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"8-TSDSON","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2500pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"5,000","Supplier Device Package":"PG-TSDSON-8 (3.3x3.3)","Datasheets":"BSZ018NE2LSI","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 20A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Re...
1849 Bytes - 14:45:05, 20 January 2025
Infineon.com/BSZ018NE2LSIATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TSDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1580 Bytes - 14:45:05, 20 January 2025
Infineon.com/BSZ018NE2LSIXT
{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.2 V to 2 V","Qg - Gate Charge":"39 nC","Package / Case":"TSDSON-8","Part # Aliases":"BSZ018NE2LSIATMA1 SP000906032","Fall Time":"3.4 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Quad Drain Triple Source","Maximum Operating Temp...
1856 Bytes - 14:45:05, 20 January 2025
