Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.17 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Packaging":"Tape and Reel","Power Dissipation":"0.36 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"8.6 ns","Description":"Value","Maximum Continuous Drain Current":"0.17 A","Package":"3SOT-23","Typical Turn-On Delay Time":"6.7 ns","Mounting":"Surface Mount","Typical Rise Time":"16.2 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"8000@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"Infineon Technologies","Typical Fall Time":"20.5 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 20\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSS84P","Rds On (Max) @ Id, Vgs":"8 Ohm @ 170mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"360mW","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"19pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current - Continu...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"8.6 ns","Description":"Value","Maximum Continuous Drain Current":"0.17 A","Package":"3SOT-23","Typical Turn-On Delay Time":"6.7 ns","Mounting":"Surface Mount","Typical Rise Time":"16.2 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"8000@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"Infineon Technologies","Typical Fall Time":"20.5 ns"}...