Product Datasheet Search Results:
8 Pages, 188 KB, Original- BSS670S2LL6327XT
- Infineon Technologies Ag
- 540 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Infineon.com/BSS670S2LL6327XT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5400 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1571 Bytes - 15:55:34, 25 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSS670S2L.pdf | 0.11 | 1 | Request |
