Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Tech...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 250\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS138INCT BSS138INCT-ND BSS138NE6327 BSS138NEINCT BSS138NEXTINCT BSS138NEXTINCT-ND","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138N Datasheet","...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"3 ns","Typical Turn-Off Delay Time":"6.7 ns","Description":"Value","Maximum Continuous Drain Current":"0.23 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"2.3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3500@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8.2 ns"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 250\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"10,000","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS138NE6433XT SP000014561","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138N Datasheet","Power - Max":"360mW","Package / Case":"TO-236-3, ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 250\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"10,000","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS138NE6908T SP000014564","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138N Datasheet","Power - Max":"360mW","Package / Case":"TO-236-3, S...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"41pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"3,000","Supplier Device Package":"PG-SOT23-3","Datasheets":"BSS138N Datasheet","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"360mW","Package / Case":"TO-236-3...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"3 ns","Typical Turn-Off Delay Time":"6.7 ns","Description":"Value","Maximum Continuous Drain Current":"0.23 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"2.3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3500@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8.2 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"41pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"10,000","Supplier Device Package":"PG-SOT23-3","Datasheets":"BSS138N Datasheet","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"360mW","Package / Case":"TO-236-...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"230mA (Ta)","Gate Charge (Qg) @ Vgs":"1.4nC @ 10V","Product Photos":"SOT-23-3","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","Datasheets":"BSS138N Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Carrier Tape Update 03/Jun/2015","Drain to Source Voltage (Vdss)":"60V","Standard...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Tech...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.23 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Packaging":"Tape and Reel","Power Dissipation":"0.36 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSS138N","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 230mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"360mW","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"41pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current - Co...