Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"240 V","Typical Rise Time":"3.1 ns","Typical Turn-Off Delay Time":"13.7 ns","Description":"Value","Maximum Continuous Drain Current":"0.11 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"3.3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"14000@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"64.5 ns"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"240 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"2.1 nC","Package / Case":"SOT-23-3","Part # Aliases":"BSS131H6327XTSA1 SP000702620","Fall Time":"64.5 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"100 mA","Rds On - Drain...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"14 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...