Product Datasheet Search Results:

BSS127H6327.pdf9 Pages, 250 KB, Original
BSS127H6327
Infineon Technologies Ag
21 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BSS127H6327XTSA2.pdf10 Pages, 251 KB, Original

Product Details Search Results:

Infineon.com/BSS127H6327
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.0210 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"1.5 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURP...
1448 Bytes - 02:43:24, 04 December 2024
Infineon.com/BSS127H6327XTSA2
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4.5V Drive","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.6V @ 8\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSS127","Rds On (Max) @ Id, Vgs":"500 Ohm @ 16mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"500mW","Standard Package":"3,000","Input Capacitance (Ciss) @ Vds":"28pF @ 25V","Drain to Source Voltage (Vdss)":"600V"...
1651 Bytes - 02:43:24, 04 December 2024

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