Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.225(W)","Continuous Drain Current":"0.17(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.8V @ 1mA","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"170mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design/Specification":"Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"6 Ohm @ 100mA, 10V","Datasheets":"BSS123LT1G,BVSS123LT1G Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10","Drain to Source Voltage (Vdss)"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.8V @ 1mA","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"170mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Assembly/Origin":"TMOS7 Wafer Fab Expansion 04/Dec/2013","PCN Design/Specification":"Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"6 Ohm @ 100mA, 10V","Datasheets":"BSS123LT1 Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standa...