Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15.2 A","Channel Type":"N-CHANNEL","China...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.2V @ 30\u00b5A","Input Capacitance (Ciss) @ Vds":"1147pF @ 10V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-SC-59","Datasheets":"BSR202N","Rds On (Max) @ Id, Vgs":"21 mOhm @ 3.8A, 4.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Tech...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Depletion","Operating Temperature Classification":"Military","Continuous Drain Current":"3.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SC-59","Type":"Small Signal","Drain-Source On-Res":"0.021(ohm)","Number of Elements":"1","Drain-Source On-Volt":"20(V)"}...