Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1.72 A","Channel Type":"P-CHANNEL","China R...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"4 Ohm @ 430mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 370\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP317PE6327INCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSP317P","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surf...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 370\u00b5A","Input Capacitance (Ciss) @ Vds":"262pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP317P","Rds On (Max) @ Id, Vgs":"4 Ohm @ 430mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounti...

{"Product Category":"MOSFET","Series":"BSP317","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP317PH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 370\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP317P","Rds On (Max) @ Id, Vgs":"4 Ohm @ 430mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"262pF @ 25V","Drain to Source Voltage (Vdss)":"250V","Current - Cont...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 370\u00b5A","Input Capacitance (Ciss) @ Vds":"262pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP317P","Rds On (Max) @ Id, Vgs":"4 Ohm @ 430mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Moun...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.43 A","Mounting":"Surface Mount","Drain-Source On-Volt":"250 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"4 ohm","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.43 A","Mounting":"Surface Mount","Drain-Source On-Volt":"250 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"4 ohm","Number of Elements":"1"}...