Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.79 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.4 A","Channel Type":"N-CHANNEL",...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"700 mOhm @ 1.1A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP296INCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP296","Power - Max":"1.79W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surfac...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"700 mOhm @ 1.1A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"4,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP296E6433T SP000011107","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP296","Power - Max":"1.79W","Package / Case":"TO-261-4, TO-261AA","M...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"700 mOhm @ 1.1A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP296L6327INDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP296","Power - Max":"1.79W","Package / Case":"TO-261-4, TO-261AA","Mounting Type"...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.79 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.1(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.79(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.7(ohm)","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.1 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.79 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.7 ohm","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"700 mOhm @ 1.1A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP296 L6433DKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP296","Power - Max":"1.79W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.79 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Product Category":"MOSFET","Series":"BSP296","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP296NH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4.5V Drive","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 100\u00b5A","Series":"OptiMOS\u2122","Package / Case":"TO-261-4, TO-261AA","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP296N","Rds On (Max) @ Id, Vgs":"600 mOhm @ 1.2A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @...