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Product Datasheet Search Results:
- BSP149E6906
- Infineon Technologies
- N-Channel SIPMOS Small-Signal Transistor
Product Details Search Results:
Infineon.com/BSP149
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.6600 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2.6 A","Channel Type":"N-CHANNEL","China ...
1547 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.8 Ohm @ 660mA, 10V","FET Feature":"Depletion Mode","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP149E6327T SP000011104","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP149","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounti...
1721 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 E6906
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.8 Ohm @ 660mA, 10V","FET Feature":"Depletion Mode","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP149E6906T SP000055414","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP149","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounti...
1722 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 H6327
{"Product Category":"MOSFET","Series":"BSP149","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP149H6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1098 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149H6327
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"3.4 ns","Typical Turn-Off Delay Time":"45 ns","Description":"Value","Maximum Continuous Drain Current":"0.66 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"5.1 ns","Channel Mode":"Depletion","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V Ohm","Manufacturer":"Infineon Technologies","Typical Fall Time":"21 ns"}...
1400 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149H6327XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 400\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP149","Rds On (Max) @ Id, Vgs":"1.8 Ohm @ 660mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"430pF @ 25V","Drain to Source Voltage (Vdss)":"200V","Current - Conti...
1602 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 H6906
{"Product Category":"MOSFET","Series":"BSP149","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP149H6906XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1089 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149H6906XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 400\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP149","Rds On (Max) @ Id, Vgs":"1.8 Ohm @ 660mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"430pF @ 25V","Drain to Source Voltage (Vdss)":"200V","Current - Conti...
1602 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 L6327
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 400\u00b5A","Input Capacitance (Ciss) @ Vds":"430pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP149","Rds On (Max) @ Id, Vgs":"1.8 Ohm @ 660mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mount...
1649 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149L6327
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"3.4 ns","Typical Turn-Off Delay Time":"45 ns","Description":"Value","Maximum Continuous Drain Current":"0.66 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"5.1 ns","Channel Mode":"Depletion","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1800@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"21 ns"}...
1423 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149L6327HTSA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Depletion","Operating Temperature Classification":"Military","Continuous Drain Current":"0.66 A","Mounting":"Surface Mount","Drain-Source On-Volt":"200 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"1.8 ohm","Number of Elements":"1"}...
1649 Bytes - 17:12:26, 23 January 2025
Infineon.com/BSP149 L6327XT
1076 Bytes - 17:12:26, 23 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSP149.pdf | 0.22 | 1 | Request |