Product Datasheet Search Results:
- BSM75GD170DL
- Infineon Technologies [eupec]
- BSM75GD170DL
Product Details Search Results:
Infineon.com/BSM75GD120DLC
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"ECONO-39","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"420 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"125 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"110 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Sha...
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Infineon.com/BSM75GD120DLCBOSA1
{"Collector Current (DC) ":"125(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"125C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Hex","Pin Count":"19"}...
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Infineon.com/BSM75GD120DN2
{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"103 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"520 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 3A","Configuration":"Hex","Maximum O...
1605 Bytes - 12:16:58, 05 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSM75GD170DL.pdf | 0.13 | 1 | Request |