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BSM50GP60G.pdf12 Pages, 185 KB, Original
BSM50GP60G.pdf12 Pages, 208 KB, Original
BSM50GP60G
Infineon Technologies
TRANS IGBT MODULE N-CH 600V 70A

Product Details Search Results:

Infineon.com/BSM50GP60G
{"Gate-Emitter Leakage Current":"300 nA","Continuous Collector Current at 25 C":"70 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"250 W","Collector-Emitter Saturation Voltage":"2.2 V","Collector- Emitter Voltage VCEO Max":"600 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPIM3","Configuration":"Hex","Maximum Op...
1534 Bytes - 20:27:46, 28 November 2024

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