Product Datasheet Search Results:
10 Pages, 225 KB, Original- BSM35GD120DN2
- Eupec Power Semiconductors
- IGBT Power Module
10 Pages, 225 KB, Original- BSM35GD120DN2E3224
- Eupec Power Semiconductors
- IGBT Power Module
9 Pages, 121 KB, Original- BSM35GD120DN2
- Infineon Technologies
- IGBT Modules N-CH 1.2KV 50A
1 Pages, 52 KB, Original- BSM35GD120DN2E3224
- Infineon Technologies
- IGBT Modules N-CH 1.2KV 50A
10 Pages, 265 KB, Original- BSM35GD120DN2E3224BOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 50A 280000mW 17-Pin ECONO2-2
Product Details Search Results:
Infineon.com/BSM35GD120DN2
{"Gate-Emitter Leakage Current":"150 nA","Continuous Collector Current at 25 C":"50 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"280 W","Collector-Emitter Saturation Voltage":"2.7 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2","Configuration":"Hex","Maximum...
1580 Bytes - 12:50:58, 03 January 2025
Infineon.com/BSM35GD120DN2E2334
{"V(CE)sat Max.(V)":"3.2","V(BR)CES (V)":"1.2k","Absolute Max. Power Diss. (W)":"280","I(GES) Max. (A)":"150n","t(d)off Max. (s) Off time":"600n","@V(GES) (V) (Test Condition)":"20","g(fe) Min. (S) Trans. admitt.":"11","V(BR)GES (V)":"20","I(C) Abs.(A) Collector Current":"50","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"1.2k","I(CES) Min. (A)":"1.0m","Package":"DIP","@V(CE) (V) (Test Condition)":"20","td(on) Max (s) On time delay":"120n","@I(C) (A) (Test Condition)":"35","t(r) Max. (s) Rise ti...
1156 Bytes - 12:50:58, 03 January 2025
Infineon.com/BSM35GD120DN2E3224
{"Gate-Emitter Leakage Current":"150 nA","Continuous Collector Current at 25 C":"50 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"280 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Bulk","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"EconoPACK 2","Collector-Emitter Saturation Voltage":"2.7 V","Configurati...
1639 Bytes - 12:50:58, 03 January 2025
Infineon.com/BSM35GD120DN2E3224BOSA1
{"Collector Current (DC) ":"50(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"ECONO2-2","Configuration":"Hex","Pin Count":"17"}...
1480 Bytes - 12:50:58, 03 January 2025
