Product Datasheet Search Results:
9 Pages, 115 KB, Original- BSM35GD120DLCE3224
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9 Pages, 207 KB, Original- BSM35GD120DLCE3224
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1 Pages, 12 KB, Original- BSM35GD120DLCE3224BOSA1
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Product Details Search Results:
Infineon.com/BSM35GD120DLCE3224
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"70 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"280 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Reel","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"EconoPACK 2A","Collector-Emitter Saturation Voltage":"2.1 V","Configurat...
1914 Bytes - 18:51:11, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM35GD120DLCE3224.pdf | 0.11 | 1 | Request |
