Datasheet.Directory

{"I(C) Abs.(A) Collector Current":"300","Circuits Per Package":"1","Package":"Module-q","V(BR)CES (V)":"1.2k"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-5","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"650 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"570 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"190 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configurati...

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-5","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Number of Terminals":"5"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"SINGLE SWITCH 1, 4 PIN","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"680 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"GENERAL PURPOSE SWITCHING","Turn-on Time-Nom (ton)":"210 ns","Collector Current-Max (IC)":"430 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":...

{"V(CE)sat Max.(V)":"3.7","V(BR)CES (V)":"1.6k","Absolute Max. Power Diss. (W)":"2.5k","t(d)off Max. (s) Off time":"2.5u","g(fe) Min. (S) Trans. admitt.":"108","V(BR)GES (V)":"20","I(C) Abs.(A) Collector Current":"400","Circuits Per Package":"1","Package":"MODULE-var","@V(CE) (V) (Test Condition)":"300","V(GE)th Max. (V)":"6.2","td(on) Max (s) On time delay":"850n","@I(C) (A) (Test Condition)":"20","t(r) Max. (s) Rise time":"300n","t(f) Max. (s) Fall time.":"150n","@V(GE) (Test Condition)":"15"}...

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"5","Turn-off Time-Nom (toff)":"930 ns","Collector-emitter Voltage-Max":"1700 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"600 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"200 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Package ...

{"Factory Pack Quantity":"10","Product":"IGBT Silicon Modules","Product Category":"IGBT Modules","Brand":"Infineon Technologies","Continuous Collector Current at 25 C":"440 A","Collector- Emitter Voltage VCEO Max":"1700 V","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"62 mm","Configuration":"Single Dual Emitter","Maximum Operating Temperature":"+ 150 C","RoHS":"Details","Manufacturer":"Infineon"}...

{"I(C) Abs.(A) Collector Current":"300","Circuits Per Package":"1","Package":"Module-q","V(BR)CES (V)":"1.0k"}...

{"V(CE)sat Max.(V)":"3.2","V(BR)CES (V)":"1.2k","Absolute Max. Power Diss. (W)":"2.5k","I(GES) Max. (A)":"320n","t(d)off Max. (s) Off time":"900n","@V(GES) (V) (Test Condition)":"20","V(BR)GES (V)":"20","I(C) Abs.(A) Collector Current":"430","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"1.2k","I(CES) Min. (A)":"5.6m","Package":"MODULE-var","@V(CE) (V) (Test Condition)":"20","V(GE)th Max. (V)":"6.5","td(on) Max (s) On time delay":"400n","@I(C) (A) (Test Condition)":"12m","t(r) Max. (s) Rise time...