Product Datasheet Search Results:
10 Pages, 226 KB, Original- BSM25GD120DN2E3224
- Eupec Power Semiconductors
- IGBT Power Module
10 Pages, 248 KB, Original- BSM25GD120DN2E3224
- Infineon Technologies
- IGBT Modules N-CH 1.2KV 35A
38 Pages, 1980 KB, Original- BSM25GD120DN2E3224BOSA1
- Infineon Technologies Ag
- BSM25GD120DN2E3224BOSA1
Product Details Search Results:
Infineon.com/BSM25GD120DN2E3224
{"Gate-Emitter Leakage Current":"180 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"200 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2","Configuration":"Hex","Maximum ...
1588 Bytes - 04:54:27, 03 January 2025
Infineon.com/BSM25GD120DN2E3224BOSA1
943 Bytes - 04:54:27, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM25GD120DN2E3224.pdf | 0.22 | 1 | Request |
