Datasheet.Directory

{"Absolute Max. Power Diss. (W)":"300","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"25","Package":"Module-q","Circuits Per Package":"1"}...

{"Gate-Emitter Leakage Current":"180 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"200 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2A","Configuration":"Hex","Maximu...

{"Collector Current (DC) ":"35(A)","Operating Temperature (Min)":"-40C","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Hex"}...

{"Gate-Emitter Leakage Current":"180 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"200 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2","Configuration":"Hex","Maximum ...