Product Datasheet Search Results:

BSM10GD120DN2E324.pdf9 Pages, 200 KB, Original
BSM10GD120DN2E324
Eupec Power Semiconductors
IGBT, IGBT Power Module, VCG 1200 V, VCE 1200 V, IC 15 A

Product Details Search Results:

Infineon.com/BSM10GD120DN2E3224
{"Gate-Emitter Leakage Current":"120 nA","Continuous Collector Current at 25 C":"15 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"80 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"EconoPACK 2","Collector-Emitter Saturation Voltage":"2.7 V","Configuratio...
1592 Bytes - 05:57:08, 20 February 2025

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