Datasheet.Directory

{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"1.0k","V(CE)sat Max.(V)":"3.3","V(BR)CES (V)":"1.0k","I(C) Abs.(A) Collector Current":"100","t(r) Max. (s) Rise time":"450n","Circuits Per Package":"1","t(f) Max. (s) Fall time.":"450n","I(GES) Max. (A)":"100n","Package":"Module-s/q","t(d)off Max. (s) Off time":"350n","I(CES) Min. (A)":"2.0m"}...

{"V(CE)sat Max.(V)":"2.8","Absolute Max. Power Diss. (W)":"1.0k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s/q","V(BR)CEO (V)":"1.2k","Military":"N"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"480 ns","Collector Current-Max (IC)":"205 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"110 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Co...

{"Absolute Max. Power Diss. (W)":"1.0k","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s/q","Circuits Per Package":"1"}...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"650 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"190 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Packa...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"480 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"110 ns","Collector Current-Max (IC)":"205 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPO...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HALF-BRIDGE 2, 7 PIN","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"470 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"210 ns","Collector Current-Max (IC)":"150 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GAT...

{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"700 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge1","Configuration":"Half Bridge","M...

{"Collector Current (DC) ":"145(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...

{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"1.0k","@V(CE) (V) (Test Condition)":"20","V(BR)CES (V)":"1.6k","Package":"MODULE-var","@I(C) (A) (Test Condition)":"100","Circuits Per Package":"1","t(f) Max. (s) Fall time.":"150u","V(GE)th Max. (V)":"6.2","t(d)off Max. (s) Off time":"2.5u","I(C) Abs.(A) Collector Current":"135","td(on) Max (s) On time delay":"850n","g(fe) Min. (S) Trans. admitt.":"36","t(r) Max. (s) Rise time":"300n"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"930 ns","Collector-emitter Voltage-Max":"1700 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"200 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configurati...

{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"1 kW","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1700 V","Packaging":"Bulk","Maximum Gate Emitter Voltage":"20 V","Mounting Style":"Screw","Package / Case":"Half Bridge2","Collector-Emitter Saturation Voltage":"3.4 V","Configuration...