Product Datasheet Search Results:
11 Pages, 123 KB, Original- BSM100GP60
- Infineon Technologies [eupec]
- BSM100GP60
12 Pages, 208 KB, Original- BSM100GP60
- Infineon Technologies
- TRANS IGBT MODULE N-CH 600V 135A
Product Details Search Results:
Infineon.com/BSM100GP60
{"Gate-Emitter Leakage Current":"300 nA","Continuous Collector Current at 25 C":"135 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"250 W","Collector-Emitter Saturation Voltage":"1.95 V","Collector- Emitter Voltage VCEO Max":"600 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPIM3","Configuration":"Hex","Maximum ...
1544 Bytes - 11:22:38, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM100GP60.pdf | 0.17 | 1 | Request |
