Product Datasheet Search Results:

BSM100GAR120DN2.pdf13 Pages, 257 KB, Original
BSM100GAR120DN2.pdf7 Pages, 135 KB, Original
BSM100GAR120DN2
Infineon Technologies
IGBT Modules up to 1200V PIM; Package: AG-62MM-2; I<sub>C </sub>(max): 100.0 A; V<sub>CE(sat)</sub> (typ): 2.5 V; Configuration: Chopper Modules; Technology: IGBT2 Standard ; Housing: 62 mm;

Product Details Search Results:

Infineon.com/BSM75GAR120DN2
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"75 A","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Package Style":"FLANGE MOUNT","Number of Elements":"1"}...
1167 Bytes - 15:32:54, 21 October 2024

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