Product Datasheet Search Results:
- BSL806N
- Infineon Technologies
- MOSFET N-CH 20V 2.3A 6TSOP - BSL806N L6327
- BSL806N L6327
- Infineon Technologies
- MOSFET N-CH 20V 2.3A 6TSOP - BSL806N L6327
- BSL806NL6327
- Infineon Technologies Ag
- 2300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Infineon.com/BSL806N L6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"57 mOhm @ 2.3A, 2.5V","FET Feature":"Logic Level Gate","Product Photos":"SC-74, SOT-457","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"750mV @ 11\u00b5A","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TSOP6-6","Other Names":"BSL806N L6327DKR","Packaging":"Digi-Reel\u00ae","FET Type":"2 N-Channel (Dual)","Datasheets":"BSL806N","Power - Max":"500mW","Package / Case":"SC-74, SOT-457","Mounting Type":"Surface...
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Infineon.com/BSL806NL6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0570 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICOND...
1538 Bytes - 09:53:41, 30 January 2025
Infineon.com/BSL806NL6327HTSA1
1035 Bytes - 09:53:41, 30 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSL806N.pdf | 0.41 | 1 | Request |