Product Datasheet Search Results:
8 Pages, 266 KB, Original- BSL211SPL6327
- Infineon Technologies Ag
- 4.7 A, 20 V, 0.067 ohm, P-CHANNEL, Si, POWER, MOSFET
8 Pages, 266 KB, Original- BSL211SPL6327XT
- Infineon Technologies Ag
- 4.7 A, 20 V, 0.067 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSL211SPL6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"26 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0670 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18....
1607 Bytes - 16:29:25, 26 October 2024
Infineon.com/BSL211SPL6327XT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"26 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0670 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18....
1589 Bytes - 16:29:25, 26 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSL211SP.pdf | 0.10 | 1 | Request |
