Product Datasheet Search Results:
- BSC320N20NS3G
- Infineon Technologies Ag
- 36 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC320N20NS3GATMA1
- Infineon Technologies
- MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
- BSC320N20NS3GXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC320N20NS3G
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"36 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"144 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Trans...
1516 Bytes - 19:24:11, 29 November 2024
Infineon.com/BSC320N20NS3GATMA1
{"Product Category":"MOSFET","Series":"BSC320N20","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1119 Bytes - 19:24:11, 29 November 2024
Infineon.com/BSC320N20NS3GXT
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"36 A","Mounting":"Surface Mount","Drain-Source On-Volt":"200 V","Pin Count":"8","Packaging":"Tape and Reel","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TDSON","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.032 ohm","Number of Elements":"1"}...
1607 Bytes - 19:24:11, 29 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSC320N20NS3G.pdf | 0.53 | 1 | Request |