Product Datasheet Search Results:
- BSC109N10NS3G
- Infineon Technologies Ag
- 63 A, 100 V, 0.0109 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC109N10NS3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC109N10NS3G
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"63 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0109 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"252 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transi...
1515 Bytes - 15:31:42, 31 March 2025
Infineon.com/BSC109N10NS3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"63(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"78(W)","Operating Temp Range":"-55C to 150C","Package Type":"TDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1566 Bytes - 15:31:42, 31 March 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSC109N10NS3G.pdf | 0.64 | 1 | Request |