Product Datasheet Search Results:
- BSC100N06LS3G
- Infineon Technologies Ag
- 12 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC100N06LS3GATMA1
- Infineon Technologies
- MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC100N06LS3GXT
- Infineon Technologies Ag
- 12 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSC100N06LS3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"22 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","China RoHS C...
1615 Bytes - 09:05:47, 18 December 2024
Infineon.com/BSC100N06LS3GATMA1
{"Product Category":"MOSFET","Series":"BSC100N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1200 Bytes - 09:05:47, 18 December 2024
Infineon.com/BSC100N06LS3GXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"22 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1572 Bytes - 09:05:47, 18 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSC100N06LS3G.pdf | 0.57 | 1 | Request |